PART |
Description |
Maker |
MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 x8 Flash EEPROM x8闪存EEPROM
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Macronix International Co., Ltd.
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28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
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Maxwell Technologies, Inc
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CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM 32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
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CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32 128K X 8 EEPROM 12V, 150 ns, PDSO32 128K X 8 EEPROM 12V, 150 ns, PQCC32
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Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
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AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
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ALLIANCE MEMORY INC ALSC[Alliance Semiconductor Corporation] ETC[ETC] Alliance Semiconductor, Corp.
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K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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AM27X010 AM27X010-120JC AM27X010-120JI AM27X010-12 |
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 250 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 55 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 120 ns, PDIP32 CABLE TIE BARB TY 120LB 18.1,1
|
PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices] ADVANCED MICRO DEVICES INC
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IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
TC55V4376FF-83 |
128K Word x 36 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?36浣??姝ョ?????查???RAM)
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Toshiba Corporation
|
MCM63D736 |
128K x 36 Bit Synchronous
Dual I/O, Dual Address SRAM(128K x 36 Bit同步双I/O双地址静态存储器)
|
Motorola, Inc.
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AT49BV001A AT49BV001A-55JI AT49BV001A-55TI AT49BV0 |
128K x 8 (1M bit), 2.7-Volt Read and Write, Top or Bottom Boot Parametric Block Flash. 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory 1-MEGABIT (128K X 8) SINGLE 2.7-VOLT BATTERY-VOLTAGE⒙ FLASH MEMORY 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory AC 12C 12#12 SKT RECP JT 100C 100#22D SKT RECP AT49BV001A(N)(T) [Updated 9/03. 18 Pages] 128K x 8 (1M bit). 2.7-Volt Read and Write. Top or Bottom Boot Parametric Block Flash. AC 6C 3#16 3#4 SKT RECP Circular Connector; No. of Contacts:55; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No 1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 1兆位128K的8)单2.7伏电池电压⑩闪存 1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
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AT49F2048A AT49F2048A-70RC AT49F2048A-70RI AT49F20 |
2M bit, 5-Volt Read and 5-Volt Write Flash, Bottom Boot From old datasheet system 2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO44 2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
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